Combined Semiconductor Injection Magnetic Field Sensors for Wireless Information Networks

Abstract

The possibility o f sensitivity inerensiug of magnetic field sensors by combining different types of sensitive elements inane sensor circuit is experimentally investigated. For this purpose, four new sensor construct ions are proposed: based on bridge circuit based on maenetotransistor in combination wilb magueiodiode or with second magnetotransisior and with frequency output. More thermostable and radiation-resistant sensor with 1 Otirnes greater sensitivity than in conventional two-diode bridge sensor is obtained with four polar mttgnetodiodes in bridge circuit, instead of two nun-polar ones. Sensor construe Enins with two-col lector magneioiransistors in combination with two polar magnetodiodes or one additional niagnelotransislor are described. The sensitivity of such devices is 6 and 4 times higher compared to single-transistor sensors, while their temperature stability and radiation resistance increase. Relaxation generator circuit based on unijunction transistor is proposed as magnetic Held sensor with frequency output. Inclusion o f additional magnelodiodc in generator circuit increases sensitivity by 2.3 times іn comparison with single-transistor sensor and improves environmental Stability. The described devices can be used as effective magnetic field sensors in wireless eommuniealion networks.